Si4464/63/61/60
Table 15. WUT Specific Commands and Properties
API Properties
GLOBAL_WUT_CONFIG
GLOBAL_WUT_M_15_8
GLOBAL_ WUT_M_7_0
GLOBAL_WUT_R
GLOBAL_WUT_LDC
Description
GLOBAL WUT configuration
Sets HW WUT_M[15:8]
Sets HW WUT_M[7:0]
Sets WUT_R[4:0]
Sets WUT_SLEEP to choose
WUT state
Sets FW internal WUT_LDC
Requirements/Notes
WUT_EN—Enable/disable wake up timer.
WUT_LBD_EN—Enable/disable low battery detect
measurement on WUT interval.
WUT_LDC_EN:
0 = Disable low duty cycle operation.
1 = RX LDC operation
treated as wake up START_RX
WUT state is used
2 = TX LDC operation
treated as wakeup START_TX
WUT state is used
CAL_EN—Enable calibration of the 32 kHz RC
oscillator
WUT_CAL_PERIOD[2:0]—Sets calibration period.
WUT_M—Parameter to set the actual wakeup time.
See equation above.
WUT_M—Parameter to set the actual wakeup time.
See equation above.
WUT_R—Parameter to set the actual wakeup time.
See equation above.
WUT_SLEEP:
0 = Go to ready state after WUT
1 = Go to sleep state after WUT
WUT_LDC—Parameter to set the actual wakeup
time. See equation in "8.2. Low Duty Cycle Mode
(Auto RX Wake-Up)" on page 43.
Table 16. WUT Related API Commands and Properties
Command/Property
Description
WUT Interrupt Enable
Requirements/Notes
INT_CTL_ENABLE
Interrupt enable property
CHIP_INT_STATUS_EN—Enables chip status
interrupt.
INT_CTL_CHIP_ENABLE
Chip interrupt enable property WUT_EN—Enables WUT interrupt.
32 kHz Clock Source Selection
GLOBAL_CLK_CFG
Clock configuration options
CLK_32K_SEL[2:0]—Configuring the source of
WUT.
WUT Interrupt Output
GPIO_PIN_CFG
Host can enable interrupt on
WUT expire
GPIOx_MODE[5:0] = 14 and
NIRQ_MODE[5:0] = 39.
RX/TX Operation
42
START_RX/TX
START RX/TX when wake up
timer expire
Rev 1.2
START = 1.
相关PDF资料
SI4465ADY-T1-GE3 MOSFET P-CH 8V 13.7A 8SOIC
SI4466DY-T1-GE3 MOSFET N-CH 20V 9.5A 8-SOIC
SI4470EY-T1-GE3 MOSFET N-CH D-S 60V 8-SOIC
SI4472DY-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC
SI4477DY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC
SI4483EDY-T1-GE3 MOSFET P-CH D-S 30V 8-SOIC
SI4484EY-T1-GE3 MOSFET N-CH 100V 8-SOIC
SI4488DY-T1-GE3 MOSFET N-CH 150V 8-SOIC
相关代理商/技术参数
SI4463-915-PDK 制造商:Silicon Laboratories Inc 功能描述:KIT DEV WIRELESS SI4463 915MHZ
Si4463-B0B-FM 功能描述:射频收发器 TRX ROM 63 EZRadioPRO RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
Si4463-B0B-FMR 功能描述:射频收发器 TRX ROM 63 EZRadioPRO RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
SI4463B1BFM 制造商:Silicon Laboratories Inc 功能描述:
Si4463-B1B-FM 功能描述:射频收发器 TRX RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
Si4463-B1B-FMR 功能描述:射频收发器 TRX RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
SI4463BDY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET
SI4463BDY-E3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET